Chin. J. Semicond. > 1990, Volume 11 > Issue 11 > 822-828
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用喇曼光谱表征锗硅应变层超晶格

徐建国 , 王建宝 , 盛篪 , 孙恒慧 , 郑思定 and 姚文华

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(11): 822-828
      徐建国, 王建宝, 盛篪, 孙恒慧, 郑思定, 姚文华. 用喇曼光谱表征锗硅应变层超晶格[J]. 半导体学报(英文版), 1990, 11(11): 822-828.
      Citation:
      徐建国, 王建宝, 盛篪, 孙恒慧, 郑思定, 姚文华. 用喇曼光谱表征锗硅应变层超晶格[J]. 半导体学报(英文版), 1990, 11(11): 822-828.
      shu

      • Received Date: 2015-08-19

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