Chin. J. Semicond. > 1988, Volume 9 > Issue 1 > 1-6

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二维短沟道MOSFET直流稳态与衬底电流的数值模拟

杜敏 and 黄敞

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Key words: short channel MOSFET, numerical simulation, hot carrier effect,subscrate current

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(1): 1-6
      杜敏, 黄敞. 二维短沟道MOSFET直流稳态与衬底电流的数值模拟[J]. 半导体学报(英文版), 1988, 9(1): 1-6.
      Citation:
      杜敏, 黄敞. 二维短沟道MOSFET直流稳态与衬底电流的数值模拟[J]. 半导体学报(英文版), 1988, 9(1): 1-6.
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      • Received Date: 2015-08-19

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