Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter

Su Shubing; Liu Xunchun; Liu Xinyu; Yu Jinyong; Wang Runmei; Xu Anhuai; Qi Ming

Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 434-437

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Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter

Su Shubing, Liu Xunchun, Liu Xinyu, Yu Jinyong, Wang Runmei, Xu Anhuai and Qi Ming

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Abstract: self-aligned InP/GaInAs single heterojunction bipolar transistor(HBT) is investigated using a novel T-shaped emitter.A U-shaped emitter layout,selective wet etching,laterally etched undercut,and an air-bridge are applied in this process.The device,which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V,and an open-base breakdown voltage of over 2V.The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz.These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.

Key words: self-alignment emitter, InP, single heterojunction bipolar transistor, T-shaped emitter, U-shaped emitter layout

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Su Shubing, Liu Xunchun, Liu Xinyu, Yu Jinyong, Wang Runmei, Xu Anhuai, Qi Ming. Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter[J]. Journal of Semiconductors, 2006, 27(3): 434-437.

Su S B, Liu X C, Liu X Y, Yu J Y, Wang R M, Xu A H, Qi M. Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter[J]. Chin. J. Semicond., 2006, 27(3): 434.

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Received: 20 August 2015 Revised: Online: Published: 01 March 2006

self-aligned InP/GaInAs single heterojunction bipolar transistor(HBT) is investigated using a novel T-shaped emitter.A U-shaped emitter layout,selective wet etching,laterally etched undercut,and an air-bridge are applied in this process.The device,which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V,and an open-base breakdown voltage of over 2V.The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz.These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.

Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter

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