Chin. J. Semicond. > 1991, Volume 12 > Issue 7 > 405-411
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雪崩热电子注入对快速热氮化的SiO_xN_y膜陷阱的影响

陈蒲生 and 杨光有

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(7): 405-411
      陈蒲生, 杨光有. 雪崩热电子注入对快速热氮化的SiO_xN_y膜陷阱的影响[J]. 半导体学报(英文版), 1991, 12(7): 405-411.
      Citation:
      陈蒲生, 杨光有. 雪崩热电子注入对快速热氮化的SiO_xN_y膜陷阱的影响[J]. 半导体学报(英文版), 1991, 12(7): 405-411.
      shu

      • Received Date: 2015-08-19

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