| Citation: |
Ma Zhongyuan, Han Peigao, Li Wei, Chen San, Qian Bo, Xu Jun, Xu Ling, Huang Xinfan, Chen Kunji, Feng Duan. Photoluminescence During the Crystallization of a-Si∶H/SiO2 Multilayers[J]. Journal of Semiconductors, 2006, 27(S1): 76-79.
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Ma Z Y, Han P G, Li W, Chen S, Qian B, Xu J, Xu L, Huang X F, Chen K J, Feng D. Photoluminescence During the Crystallization of a-Si∶H/SiO2 Multilayers[J]. Chin. J. Semicond., 2006, 27(13): 76.
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Photoluminescence During the Crystallization of a-Si∶H/SiO2 Multilayers
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Abstract
a-Si∶H/SiO2 multilayers with different thickness of a-Si∶H were layer by layer deposited and in situ plasma oxidized by plasma enhanced chemical vapor deposition system.Size-controlled nc-Si/SiO2 multilayers were obtained through step-by-step thermal annealing of a-Si∶H/SiO2 multilayers including dehydrogenation,rapid thermal annealing,quasi-static annealing.The change of photoluminescence from a-Si∶H/SiO2 to nc-Si/SiO2 was traced through step-by-step post-treatment combined with Raman,FTIR and TEM.The origin of the change of photoluminescence at different stage of thermal annealing is investigated.The relation between the change of photoluminescence and microstructure of the samples is discussed in detail.-
Keywords:
- a-Si∶H/SiO2 mutilayers,
- nc-Si,
- photoluminescence
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References
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