Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1160-1164
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4H-SiC射频功率MESFET大信号直流I-V特性解析模型

杨林安 , 张义门 , 吕红亮 , 张玉明 and 于春利

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Key words: 4H-SiC, 射频功率MESFET, 非线性大信号模型, 直流I-V特性

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1160-1164
      杨林安, 张义门, 吕红亮, 张玉明, 于春利. 4H-SiC射频功率MESFET大信号直流I-V特性解析模型[J]. 半导体学报(英文版), 2001, 22(9): 1160-1164.
      Citation:
      杨林安, 张义门, 吕红亮, 张玉明, 于春利. 4H-SiC射频功率MESFET大信号直流I-V特性解析模型[J]. 半导体学报(英文版), 2001, 22(9): 1160-1164.
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      • Received Date: 2015-08-20

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