| Citation: |
Zhao Yanqiao, Liu Caichi, Hao Qiuyan, Sun Weizhong. Dislocations and Microdefects in Large Diameter SI-GaAs。[J]. Journal of Semiconductors, 2007, 28(S1): 133-136.
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Zhao Y Q, Liu C C, Hao Q Y, Sun W Z. Dislocations and Microdefects in Large Diameter SI-GaAs。[J]. Chin. J. Semicond., 2007, 28(S1): 133.
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Dislocations and Microdefects in Large Diameter SI-GaAs。
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Abstract
The dislocation and micro-·defects in ф150mm SI-GaAs single crystal are investigated by means of chemical etching and microscopy observation.The experimental results show dislocations，micro-defects and cell structures in the samples. By analyzing the etching morphology of dislocations and micro-defects，the density and formation of defects in large diameter SIGaAs are discussed.-
Keywords:
- SI-GaAs,
- chemical etching,
- dislocations,
- microdefects
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References
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Proportional views
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