Chin. J. Semicond. > 1998, Volume 19 > Issue 11 > 877-880

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400MHz 250W VDMOS功率场效应晶体管

刘英坤 , 杨增敏 , 郎秀兰 , 王占利 , 何玉樟 , 吕仲志 , 李勇 and 周晓黎

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    Received: 18 August 2015 Revised: Online: Published: 01 November 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(11): 877-880
      刘英坤, 杨增敏, 郎秀兰, 王占利, 何玉樟, 吕仲志, 李勇, 周晓黎. 400MHz 250W VDMOS功率场效应晶体管[J]. 半导体学报(英文版), 1998, 19(11): 877-880.
      Citation:
      刘英坤, 杨增敏, 郎秀兰, 王占利, 何玉樟, 吕仲志, 李勇, 周晓黎. 400MHz 250W VDMOS功率场效应晶体管[J]. 半导体学报(英文版), 1998, 19(11): 877-880.
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      • Received Date: 2015-08-18

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