Chin. J. Semicond. > 1988, Volume 9 > Issue 1 > 96-99
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0.3K下的GaAs/Al_xGa_(1-x)As异质结中的分数量子霍耳效应

杨富华 , 程文超 , 郑厚植 and 周海平

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(1): 96-99
      杨富华, 程文超, 郑厚植, 周海平. 0.3K下的GaAs/Al_xGa_(1-x)As异质结中的分数量子霍耳效应[J]. 半导体学报(英文版), 1988, 9(1): 96-99.
      Citation:
      杨富华, 程文超, 郑厚植, 周海平. 0.3K下的GaAs/Al_xGa_(1-x)As异质结中的分数量子霍耳效应[J]. 半导体学报(英文版), 1988, 9(1): 96-99.
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      • Received Date: 2015-08-19

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