Chin. J. Semicond. > 1988, Volume 9 > Issue 2 > 135-149
|

CONTENTS

质量迁移层对InGaAsP BH半导体激光器阈值电流和模式行为的影响

郭长志 and 陈水莲

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2590 Times PDF downloads: 1143 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1988

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1988  >  9(2): 135-149
      郭长志, 陈水莲. 质量迁移层对InGaAsP BH半导体激光器阈值电流和模式行为的影响[J]. 半导体学报(英文版), 1988, 9(2): 135-149.
      Citation:
      郭长志, 陈水莲. 质量迁移层对InGaAsP BH半导体激光器阈值电流和模式行为的影响[J]. 半导体学报(英文版), 1988, 9(2): 135-149.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return