Abstract:

TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented. Based on dynamic equilibrium equation in the process of trapped charges, the method can obtain the trap density by measuring the change of gate voltage of MOS capacitance under constant current stress and the change of high frequency C-V curve before and after the stress. The dynamitic parameters of characterization the trap density can be extracted from the experiment. On the base of experiment, the accumulation failure of devices can be evaluated precisely.

Key words: thin gate oxides, TDDB (time dependent dielectric breakdown), trap density, accumulative failure