Chin. J. Semicond. > 2005, Volume 26 > Issue 8 > 1567-1571
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Ga掺杂ZnO薄膜的MOCVD生长及其特性

朱顺明 , 叶建东 , 顾书林 , 刘松民 , 郑有炓 , 张荣 and 施毅

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Key words: 氧化锌, 掺杂, Burstein-Moss效应, 能带重整化, 金属有机化学气相外延

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    Received: 18 August 2015 Revised: Online: Published: 01 August 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(8): 1567-1571
      朱顺明, 叶建东, 顾书林, 刘松民, 郑有炓, 张荣, 施毅. Ga掺杂ZnO薄膜的MOCVD生长及其特性[J]. 半导体学报(英文版), 2005, 26(8): 1567-1571.
      Citation:
      朱顺明, 叶建东, 顾书林, 刘松民, 郑有炓, 张荣, 施毅. Ga掺杂ZnO薄膜的MOCVD生长及其特性[J]. 半导体学报(英文版), 2005, 26(8): 1567-1571.
      shu

      • Received Date: 2015-08-18

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