Chin. J. Semicond. > 1990, Volume 11 > Issue 9 > 647-653

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垂直磁场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算

李树深 and 焦善庆

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(9): 647-653
      李树深, 焦善庆. 垂直磁场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算[J]. 半导体学报(英文版), 1990, 11(9): 647-653.
      Citation:
      李树深, 焦善庆. 垂直磁场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算[J]. 半导体学报(英文版), 1990, 11(9): 647-653.
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      • Received Date: 2015-08-19

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