Citation: |
Zhang Guohe, Shao Zhibiao, Zhou Kai. Threshold Voltage Model for a Fully Depleted SOI-MOSFETwith a Non-Uniform Profile[J]. Journal of Semiconductors, 2007, 28(6): 842-847.
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Zhang G H, Shao Z B, Zhou K. Threshold Voltage Model for a Fully Depleted SOI-MOSFETwith a Non-Uniform Profile[J]. Chin. J. Semicond., 2007, 28(6): 842.
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Threshold Voltage Model for a Fully Depleted SOI-MOSFETwith a Non-Uniform Profile
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Abstract
A novel approximation of the two-dimensional (2D) potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.The model agrees well with numerical simulation by MEDICI.The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted (FD) SOI devices in practice. -
References
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