| Citation: |
Yang Wei, Liu Xunchun, 朱旻, Zhu Min, Wang Runmei. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Journal of Semiconductors, 2006, 27(9): 1604-1607.
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Yang W, Liu X C, Zhu M, Wang R M. Fabrication of a New-Layout InGaP/GaAs HBT[J]. Chin. J. Semicond., 2006, 27(9): 1604.
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Fabrication of a New-Layout InGaP/GaAs HBT
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Abstract
The HBT is one of the most important devices in microwave and millimeter wave fields due to its outstanding performance and high reliability.A novel-layout HBT that employs a three-finger emitter is demonstrated.Compared to an HBT with a two-finger emitter,this device has good process tolerance,high yield,and good uniformity.Furthermore,it has superior DC and high-frequency characteristics.-
Keywords:
- HBT,
- three-finger emitter,
- self-aligned
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References
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Proportional views
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