| Citation: |
Duan Huigao, Xie Erqing, Ye Fan, Jiang Ran, Wang Xiaoming. Field Emission from Hafnium Oxynitride[J]. Journal of Semiconductors, 2006, 27(S1): 208-210.
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Duan H G, Xie E Q, Ye F, Jiang R, Wang X M. Field Emission from Hafnium Oxynitride[J]. Chin. J. Semicond., 2006, 27(13): 208.
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Field Emission from Hafnium Oxynitride
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Abstract
HfOxNy films are prepared by direct current sputtering and subsequently are annealed at high temperature.Their field emission characteristics are investigated.Low turn-on field,high field emission current density,and very good field emission stability are showed.High voltage activation plays a critical role in improving the field emission of HfOxNy,which is thought that the chemical structure and the surface character of the samples are changed at high voltage.The field emission mechanism for HfOxNy is in agreement very well with the classical Fowler-Nordheim tunneling theory.-
Keywords:
- HfOxNy,
- field emission,
- high voltage activation
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References
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Proportional views
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