Chin. J. Semicond. > 1998, Volume 19 > Issue 2 > 103-107
|

CONTENTS

采用多孔氧化硅形成超薄SOI结构的研究

黄宜平 , 李爱珍 , 蒋美萍 , 邹斯洵 , 李金华 and 竺士炀

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2808 Times PDF downloads: 1363 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(2): 103-107
      黄宜平, 李爱珍, 蒋美萍, 邹斯洵, 李金华, 竺士炀. 采用多孔氧化硅形成超薄SOI结构的研究[J]. 半导体学报(英文版), 1998, 19(2): 103-107.
      Citation:
      黄宜平, 李爱珍, 蒋美萍, 邹斯洵, 李金华, 竺士炀. 采用多孔氧化硅形成超薄SOI结构的研究[J]. 半导体学报(英文版), 1998, 19(2): 103-107.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return