| Citation: |
Ma Tieying, Li Tie, Liu Wenping, Wang Yuelin. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. Journal of Semiconductors, 2008, 29(11): 2265-2269.
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Ma T Y, Li T, Liu W P, Wang Y L. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. J. Semicond., 2008, 29(11): 2265.
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Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD
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Abstract
A hydrogenated amorphous silicon of different phosphor doping concentrations is fabricated by PECVD.FTIR spectra and TCR of a-Si:H are obtained after annealing at different temperatures and times.The structure and bonding of the film are decided by different annealing conditions,leading to the change in the thermal and electric characteristics.Lu’s model is used to explain the phenomena,and an optimum preparation is attained with a doping ratio of 0.025 and an annealing temperature of 600℃.-
Keywords:
- amorphous silicon,
- annealing,
- FTIR,
- temperature coefficient resistance
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References
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Proportional views
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