Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method

Ye Zhizhen; Xu Weizhong; Zeng Yujia; Jiang  Liu; Zhao  Binghui; Zhu  Liping; Lü Jianguo; Huang Jingyun; Wang  Lei; Li Xianhang

Article Navigation > Journal of Semiconductors > 2005 > 26(11): 2264-2266

Ye Zhizhen, Xu Weizhong, Zeng Yujia, Jiang Liu, Zhao Binghui, Zhu Liping, Lü Jianguo, Huang Jingyun, Wang Lei, Li Xianhang. Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method[J]. Journal of Semiconductors, 2005, 26(11): 2264-2266. ****Ye Z Z, Xu W Z, Zeng Y J, Jiang L, Zhao B H, Zhu L P, Lü J, Huang J Y, Wang L, Li X H. Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method[J]. Chin. J. Semicond., 2005, 26(11): 2264.

Citation:

Ye Z Z, Xu W Z, Zeng Y J, Jiang L, Zhao B H, Zhu L P, Lü J, Huang J Y, Wang L, Li X H. Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method[J]. Chin. J. Semicond., 2005, 26(11): 2264.

Citation:

Ye Z Z, Xu W Z, Zeng Y J, Jiang L, Zhao B H, Zhu L P, Lü J, Huang J Y, Wang L, Li X H. Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method[J]. Chin. J. Semicond., 2005, 26(11): 2264.

PDF( 239 KB)

Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310028,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310029,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310030,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310031,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310032,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310033,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310034,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310035,China
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310036,China

Received Date: 2015-08-19

Abstract

Abstract

p-type zinc oxide (ZnO) thin films are grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD).A ZnO homostructural light-emitting diode is fabricated by growing p-type ZnO epi-layer on n-type bulk ZnO wafer. The room temperature electroluminescence spectrum from violet to green regions is observed while the ZnO-LED is supplied with a DC voltage.
- ZnO,
- LED,
- p-type doping,
- metalorganic chemical vapor deposition

FullText(HTML)

References(0)

References

Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method

Abstract

References

Proportional views

Catalog

Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Fabrication of ZnO Light-Emitting Diode by Using MOCVD Method

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content