Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 567-573
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无坑洞n-3C-SiC/p-Si(100)的LPCVD外延生长及其异质结构特性(英文)

孙国胜 , 孙艳玲 , 王雷 , 赵万顺 , 罗木昌 , 张永兴 , 曾一平 , 李晋闽 and 林兰英

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Key words: LPCVD, 无坑洞n-3C-SiC/p-Si, 异质结特性

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 567-573
      孙国胜, 孙艳玲, 王雷, 赵万顺, 罗木昌, 张永兴, 曾一平, 李晋闽, 林兰英. 无坑洞n-3C-SiC/p-Si(100)的LPCVD外延生长及其异质结构特性(英文)[J]. 半导体学报(英文版), 2003, 24(6): 567-573.
      Citation:
      孙国胜, 孙艳玲, 王雷, 赵万顺, 罗木昌, 张永兴, 曾一平, 李晋闽, 林兰英. 无坑洞n-3C-SiC/p-Si(100)的LPCVD外延生长及其异质结构特性(英文)[J]. 半导体学报(英文版), 2003, 24(6): 567-573.
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      • Received Date: 2015-08-20

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