| Citation: |
Lin Zhaojun, Zhao Jianzhi, Zhang Min. Threshold Voltage of AIGaN/GaN HFET[J]. Journal of Semiconductors, 2007, 28(S1): 422-425.
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Lin Z J, Zhao J Z, Zhang M. Threshold Voltage of AIGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(S1): 422.
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Threshold Voltage of AIGaN/GaN HFET
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Abstract
The threshold voltage of A1GaN/GaN heterostructure field effect transistor (A1GaN/GaN HFET) has been deter. mined by the capacitance·voltage(C-V)characteristics of Schottky gate contacts。The measured and calculated current.volt. age(I-V)characteristics for A1GaN/GaN HFET show that the threshold voltage for A1GaN/GaN HFET can be gotten by the maximum point of the differential C-V characteristics.-
Keywords:
- AIGaN/GaN HFET,
- threshold voltage,
- C-V curves
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References
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Proportional views
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