| Citation: |
Cen Zhanhong, Xu Jun, Li Xin, Li Wei, 陈三, Chen San, Liu Yansong, Huang Xinfan. Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics[J]. Journal of Semiconductors, 2006, 27(6): 1016-1020.
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Cen Z H, Xu J, Li X, Li W, Chen S, Liu Y S, Huang X F. Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics[J]. Chin. J. Semicond., 2006, 27(6): 1016.
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Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics
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Abstract
Silicon nanostructures with high density (up to 1E11cm-2) and with a lateral size of 10～30nm and a vertical size limited by the film thickness are fabricated on insulating SiNx layers by combining laser irradiation on an ultrathin (4～30nm) amorphous Si film and subsequent thermal annealing.Atomic force microscopy,transmission electron microscopy,and Raman scattering spectroscopy are employed to characterize the surface morphology,crystallization process’ and crystallite.The influence of the laser irradiation and the thickness of the initial amorphous Si layer on the formation of the Si nanostructures is studied.A strong photoluminescence with a peak located at about 660nm,which we tentatively attribute to the crystalline Si grains, can be detected from the 5nm thick crystallized sample.-
Keywords:
- nanocrytalline Si,
- laser crystallization,
- photoluminescence
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References
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Proportional views
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