Chin. J. Semicond. > 2000, Volume 21 > Issue 12 > 1152-1156

Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular Beam Epitaxy

李联合 , 潘钟 , 张伟 , 林耀望 , 王学宇 and 吴荣汉

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Key words: GaInNAs/GaAs

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Received: 20 August 2015 Revised: Online: Published: 01 December 2000

Article Navigation > Journal of Semiconductors > 2000 > 21(12): 1152-1156

李联合, 潘钟, 张伟, 林耀望, 王学宇, 吴荣汉. Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(12): 1152-1156.

Citation:

李联合, 潘钟, 张伟, 林耀望, 王学宇, 吴荣汉. Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(12): 1152-1156.

李联合, 潘钟, 张伟, 林耀望, 王学宇, 吴荣汉. Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(12): 1152-1156.

Citation:

李联合, 潘钟, 张伟, 林耀望, 王学宇, 吴荣汉. Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular Beam Epitaxy[J]. 半导体学报(英文版), 2000, 21(12): 1152-1156.

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