Chin. J. Semicond. > 2004, Volume 25 > Issue 11 > 1544-1548

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热氧化方法改善硅干法刻蚀波导的表面粗糙度

陈媛媛 , 夏金松 , 樊中朝 and 余金中

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Key words: 热氧化, 光波导, 表面粗糙度

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(11): 1544-1548
      陈媛媛, 夏金松, 樊中朝, 余金中. 热氧化方法改善硅干法刻蚀波导的表面粗糙度[J]. 半导体学报(英文版), 2004, 25(11): 1544-1548.
      Citation:
      陈媛媛, 夏金松, 樊中朝, 余金中. 热氧化方法改善硅干法刻蚀波导的表面粗糙度[J]. 半导体学报(英文版), 2004, 25(11): 1544-1548.
      shu

      • Received Date: 2015-08-19

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