Chin. J. Semicond. > 1987, Volume 8 > Issue 2 > 193-195
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InAs和InSb(111)清洁表面存在In岛的实验证据

侯晓远 , 俞鸣人 and 王迅

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(2): 193-195
      侯晓远, 俞鸣人, 王迅. InAs和InSb(111)清洁表面存在In岛的实验证据[J]. 半导体学报(英文版), 1987, 8(2): 193-195.
      Citation:
      侯晓远, 俞鸣人, 王迅. InAs和InSb(111)清洁表面存在In岛的实验证据[J]. 半导体学报(英文版), 1987, 8(2): 193-195.
      shu

      • Received Date: 2015-08-19

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