Chin. J. Semicond. > 1996, Volume 17 > Issue 12 > 886-890
|

CONTENTS

LPE法在Si衬底上生长SiGe层的方法及电子特性的研究

陈建新，邹德恕，张时明，韩军，沈光地

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2434 Times PDF downloads: 1141 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 December 1996

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1996  >  17(12): 886-890
      陈建新，邹德恕，张时明，韩军，沈光地. LPE法在Si衬底上生长SiGe层的方法及电子特性的研究[J]. 半导体学报(英文版), 1996, 17(12): 886-890.
      Citation:
      陈建新，邹德恕，张时明，韩军，沈光地. LPE法在Si衬底上生长SiGe层的方法及电子特性的研究[J]. 半导体学报(英文版), 1996, 17(12): 886-890.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return