Chin. J. Semicond. > 1996, Volume 17 > Issue 12 > 886-890
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LPE法在Si衬底上生长SiGe层的方法及电子特性的研究

陈建新，邹德恕，张时明，韩军，沈光地

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    Received: 18 August 2015 Revised: Online: Published: 01 December 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(12): 886-890
      陈建新，邹德恕，张时明，韩军，沈光地. LPE法在Si衬底上生长SiGe层的方法及电子特性的研究[J]. 半导体学报(英文版), 1996, 17(12): 886-890.
      Citation:
      陈建新，邹德恕，张时明，韩军，沈光地. LPE法在Si衬底上生长SiGe层的方法及电子特性的研究[J]. 半导体学报(英文版), 1996, 17(12): 886-890.
      shu

      • Received Date: 2015-08-18

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