Fabrication of SiC MESFETs for Microwave Power Applications

Bai Song; Chen Gang; Zhang Tao; Li Zheyang; Wang Hao; Jiang Youquan; Han Chunlin; Chen Chen

National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

Article Navigation > Journal of Semiconductors > 2007 > 28(1): 10-13

Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, Jiang Youquan, Han Chunlin, Chen Chen. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Journal of Semiconductors, 2007, 28(1): 10-13. ****Bai S, Chen G, Zhang T, Li Z Y, Wang H, Jiang Y Q, Han C L, Chen C. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Chin. J. Semicond., 2007, 28(1): 10.

Citation:

Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, Jiang Youquan, Han Chunlin, Chen Chen. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Journal of Semiconductors, 2007, 28(1): 10-13. ****

Bai S, Chen G, Zhang T, Li Z Y, Wang H, Jiang Y Q, Han C L, Chen C. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Chin. J. Semicond., 2007, 28(1): 10.

Citation:

Bai S, Chen G, Zhang T, Li Z Y, Wang H, Jiang Y Q, Han C L, Chen C. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Chin. J. Semicond., 2007, 28(1): 10.

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Fabrication of SiC MESFETs for Microwave Power Applications

National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China
National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China

Received Date: 2015-08-18
Accepted Date: 2006-07-26
Revised Date: 2006-08-23
Published Date: 2006-12-26

Abstract

Abstract

4H-SiC MESFETs are fabricated on semi-insulating SiC substrates.Key processes are optimized to obtain better device performance.A microwave power amplifier is demonstrated from a 1mm SiC MESFET for S band operation.When operated at a drain voltage of 64V,the amplifier shows an output power of 4.09W,a gain of 9.3dB,and a power added efficiency of 31.3%.
- 4H-SiC,
- MESFET,
- microwave,
- power amplifier

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