Chin. J. Semicond. > 1999, Volume 20 > Issue 12 > 1059-1063
|

CONTENTS

Cd Zn Te晶体中位错分布特性研究

顾惠明 , 杨建荣 , 陈新强 and 何力

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    顾惠明, 杨建荣, 陈新强, 何力. Cd Zn Te晶体中位错分布特性研究[J]. 半导体学报(英文版), 1999, 20(12): 1059-1063.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2675 Times PDF downloads: 1472 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 December 1999

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1999  >  20(12): 1059-1063
      顾惠明, 杨建荣, 陈新强, 何力. Cd Zn Te晶体中位错分布特性研究[J]. 半导体学报(英文版), 1999, 20(12): 1059-1063.
      Citation:
      顾惠明, 杨建荣, 陈新强, 何力. Cd Zn Te晶体中位错分布特性研究[J]. 半导体学报(英文版), 1999, 20(12): 1059-1063.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return