Chin. J. Semicond. > 1985, Volume 6 > Issue 1 > 104-106
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一种汽相生长多层外延InP的方法

黄善祥

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(1): 104-106
      黄善祥. 一种汽相生长多层外延InP的方法[J]. 半导体学报(英文版), 1985, 6(1): 104-106.
      Citation:
      黄善祥. 一种汽相生长多层外延InP的方法[J]. 半导体学报(英文版), 1985, 6(1): 104-106.
      shu

      • Received Date: 2015-08-20

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