Chin. J. Semicond. > 1998, Volume 19 > Issue 9 > 672-677
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中子辐照GaAs的沟道卢瑟福背散射研究

刘键 , 王佩璇 , 柯俊 , 朱沛然 , 扬峰 and 殷士端

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    Received: 18 August 2015 Revised: Online: Published: 01 September 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(9): 672-677
      刘键, 王佩璇, 柯俊, 朱沛然, 扬峰, 殷士端. 中子辐照GaAs的沟道卢瑟福背散射研究[J]. 半导体学报(英文版), 1998, 19(9): 672-677.
      Citation:
      刘键, 王佩璇, 柯俊, 朱沛然, 扬峰, 殷士端. 中子辐照GaAs的沟道卢瑟福背散射研究[J]. 半导体学报(英文版), 1998, 19(9): 672-677.
      shu

      • Received Date: 2015-08-18

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