| Citation: |
Shi Kai, Xu Mingzhen, Tan Changhua. Effects of Reverse Substrate Bias on the Endurance Degradation of FLASH Memory Devices[J]. Journal of Semiconductors, 2006, 27(6): 1115-1119.
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Shi K, Xu M Z, Tan C H. Effects of Reverse Substrate Bias on the Endurance Degradation of FLASH Memory Devices[J]. Chin. J. Semicond., 2006, 27(6): 1115.
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Effects of Reverse Substrate Bias on the Endurance Degradation of FLASH Memory Devices
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Abstract
The effects of reverse substrate bias on the endurance degradation of ETOXTM FLASH memory devices under the stress mode VFG≈VD／2 are investigated.The results indicate that as the reverse substrate bias increases the injection efficiency,the endurance degradation of the device is minimized under certain reverse substrate bias.Taking both the device endurance degradation and the injection efficiency into account,a FLASH memory device with optimal reverse substrate bias under the stress mode VFG≈VD／2 is obtained with the minimum endurance degradation and the greatest injection efficiency.-
Keywords:
- FLASH memory,
- hot-carrier,
- endurance,
- impact ionization
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References
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Proportional views
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