Chin. J. Semicond. > 1992, Volume 13 > Issue 7 > 438-447
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CZNTD Si中氧碳对缺陷-杂质复合体行为的影响

张一心 , 李朝勇 , 李光平 , 何秀坤 , 卢存刚 and 李祖华

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(7): 438-447
      张一心, 李朝勇, 李光平, 何秀坤, 卢存刚, 李祖华. CZNTD Si中氧碳对缺陷-杂质复合体行为的影响[J]. 半导体学报(英文版), 1992, 13(7): 438-447.
      Citation:
      张一心, 李朝勇, 李光平, 何秀坤, 卢存刚, 李祖华. CZNTD Si中氧碳对缺陷-杂质复合体行为的影响[J]. 半导体学报(英文版), 1992, 13(7): 438-447.
      shu

      • Received Date: 2015-08-19

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