Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1425-1428
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RF-MBE生长AlGaN/GaN极化感应二维电子气材料

孙殿照 , 胡国新 , 王晓亮 , 刘宏新 , 刘成海 , 曾一平 , 李晋闽 and 林兰英

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Key words: RF-MBE, 二维电子气, HFET, AlGaN/GaN

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1425-1428
      孙殿照, 胡国新, 王晓亮, 刘宏新, 刘成海, 曾一平, 李晋闽, 林兰英. RF-MBE生长AlGaN/GaN极化感应二维电子气材料[J]. 半导体学报(英文版), 2001, 22(11): 1425-1428.
      Citation:
      孙殿照, 胡国新, 王晓亮, 刘宏新, 刘成海, 曾一平, 李晋闽, 林兰英. RF-MBE生长AlGaN/GaN极化感应二维电子气材料[J]. 半导体学报(英文版), 2001, 22(11): 1425-1428.
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      • Received Date: 2015-08-20

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