Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 235-238
|

PAPERS

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, Zhang Guoyi, Gui Yongsheng, Zhu Bo, Guo Shaoling and Chu Junhao

+ Author Affiliations

PDF

Abstract: Magnetotransport properties of two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields.It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.

Key words: AlxGa1-xN/GaN heterostructure, two-dimensional electron gas, transport property

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 7453 Times PDF downloads: 2242 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2006  >  27(2): 235-238
      Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, Zhang Guoyi, Gui Yongsheng, Zhu Bo, Guo Shaoling, Chu Junhao. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Journal of Semiconductors, 2006, 27(2): 235-238. ****Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Gui Y S, Zhu B, Guo S L, Chu J H. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Chin. J. Semicond., 2006, 27(2): 235.
      Citation:
      Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, Zhang Guoyi, Gui Yongsheng, Zhu Bo, Guo Shaoling, Chu Junhao. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Journal of Semiconductors, 2006, 27(2): 235-238. ****
      Tang N, Shen B, Wang M J, Yang Z J, Xu K, Zhang G Y, Gui Y S, Zhu B, Guo S L, Chu J H. Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy[J]. Chin. J. Semicond., 2006, 27(2): 235.
      shu

      Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

      • State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

      • State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

      • State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

      • State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

      • State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

      • State Key Laboratory of Artificial Microstructures and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return