| Citation: |
Huo Fengwei, Kang Renke, Guo Dongming, Zhao Fuling, Jin Zhuji. An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers[J]. Journal of Semiconductors, 2006, 27(3): 506-510.
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Huo F W, Kang R K, Guo D M, Zhao F L, Jin Z J. An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers[J]. Chin. J. Semicond., 2006, 27(3): 506.
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An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers
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Abstract
We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage.The bevel angle can be calculated from the interference fringes formed in the wedge.The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers.Our results show that the method is straightforward,accurate,and convenient.-
Keywords:
- silicon wafer,
- subsurface damage,
- angle polishing,
- defect etching,
- wedge fringes
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References
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Proportional views
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