Chin. J. Semicond. > 1992, Volume 13 > Issue 4 > 236-241
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GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层中的近红外光致发光对激发强度的依赖关系

赵家龙 , 高瑛 , 刘学彦 , 苏锡安 , 梁家昌 , 关兴国 and 章其麟

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(4): 236-241
      赵家龙, 高瑛, 刘学彦, 苏锡安, 梁家昌, 关兴国, 章其麟. GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层中的近红外光致发光对激发强度的依赖关系[J]. 半导体学报(英文版), 1992, 13(4): 236-241.
      Citation:
      赵家龙, 高瑛, 刘学彦, 苏锡安, 梁家昌, 关兴国, 章其麟. GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层中的近红外光致发光对激发强度的依赖关系[J]. 半导体学报(英文版), 1992, 13(4): 236-241.
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      • Received Date: 2015-08-19

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