| Citation: |
Lü Hongliang, Zhang Yimen, Zhang Yuming, Che Yong, Wang Yuehu. Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs[J]. Journal of Semiconductors, 2008, 29(2): 334-337.
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Lü H, Zhang Y M, Zhang Y M, Che Y, Wang Y H. Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs[J]. J. Semicond., 2008, 29(2): 334.
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Influence of the Trapping Effect on Temperature Characteristics in 4H-SiC MESFETs
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Abstract
Based on the DC model and the self-heating model of SiC MESFETs, the self-heating effect is investigated in detail.The back-gated effect and its influence on high temperature characteristics are studied.The simulation results show that the activation energy of the traps is 1.07eV with a capture cross section of 1e-8cm2.The back-gate potential increases as trap concentration increases, and it reaches ~3V at room temperature.As the drain voltage increases, the back-gate potential decreases.The proposed model is valuable in the design of high-power and high-temperature applications.-
Keywords:
- SiC,
- MESFET,
- self-heating,
- deep level trap
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References
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Proportional views
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