Chin. J. Semicond. > 1990, Volume 11 > Issue 11 > 834-837
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TEM电子束诱导硅表面氧化的分析

杨德仁 and 姚鸿年

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(11): 834-837
      杨德仁, 姚鸿年. TEM电子束诱导硅表面氧化的分析[J]. 半导体学报(英文版), 1990, 11(11): 834-837.
      Citation:
      杨德仁, 姚鸿年. TEM电子束诱导硅表面氧化的分析[J]. 半导体学报(英文版), 1990, 11(11): 834-837.
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      • Received Date: 2015-08-19

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