Chin. J. Semicond. > 1997, Volume 18 > Issue 7 > 508-512
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MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法

庄岩 , 王玉田 , 马文全 , 林耀望 and 周增圻

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(7): 508-512
      庄岩, 王玉田, 马文全, 林耀望, 周增圻. MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法[J]. 半导体学报(英文版), 1997, 18(7): 508-512.
      Citation:
      庄岩, 王玉田, 马文全, 林耀望, 周增圻. MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法[J]. 半导体学报(英文版), 1997, 18(7): 508-512.
      shu

      • Received Date: 2015-08-19

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