Chin. J. Semicond. > 1997, Volume 18 > Issue 7 > 508-512
|

CONTENTS

MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法

庄岩 , 王玉田 , 马文全 , 林耀望 and 周增圻

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2367 Times PDF downloads: 1168 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 July 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(7): 508-512
      庄岩, 王玉田, 马文全, 林耀望, 周增圻. MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法[J]. 半导体学报(英文版), 1997, 18(7): 508-512.
      Citation:
      庄岩, 王玉田, 马文全, 林耀望, 周增圻. MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法[J]. 半导体学报(英文版), 1997, 18(7): 508-512.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return