| Citation: |
Fang Cebao, Wang Xiaoliang, Xiao Hongling, Wang Cuimei, Ran Junxue, Li Chengji, Luo Weijun, Yang Cuibai, Zeng Yiping, Li Jinmin. Resistivity Measurement of High-Resistivity GaN Film[J]. Journal of Semiconductors, 2007, 28(S1): 536-540.
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Fang C B, Wang X L, Xiao H L, Wang C M, Ran J X, Li C J, Luo W J, Yang C B, Zeng Y P, Li J M. Resistivity Measurement of High-Resistivity GaN Film[J]. Chin. J. Semicond., 2007, 28(S1): 536.
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Resistivity Measurement of High-Resistivity GaN Film
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Abstract
Wc establish an equipment of measuring resistivity of high·resistivity GaN film for insulated-resistance more than 10^13 Ω and temperature fluctuation less than 0.1℃，and state briefly measurement principle of resistivity.We also investigate the influence of environmental temperature。humidity，leakage current，collected-time of data，measured-voltage，and size of sample on resistivity，respectively，and discuss measurement error induced by the factors.-
Keywords:
- igh-resistivity GaN,
- resistivity,
- measurement
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References
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Proportional views
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