Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 324-326
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1.3微米InGaAsP/InP双沟道平面掩埋异质结激光器

赵嵩山 , 王德超 , 吴友宇 and 王玉章

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 324-326
      赵嵩山, 王德超, 吴友宇, 王玉章. 1.3微米InGaAsP/InP双沟道平面掩埋异质结激光器[J]. 半导体学报(英文版), 1986, 7(3): 324-326.
      Citation:
      赵嵩山, 王德超, 吴友宇, 王玉章. 1.3微米InGaAsP/InP双沟道平面掩埋异质结激光器[J]. 半导体学报(英文版), 1986, 7(3): 324-326.
      shu

      • Received Date: 2015-08-20

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