Chin. J. Semicond. > 1997, Volume 18 > Issue 9 > 706-709
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一种新的SOI制备技术:H~+离子注入、键合和分离

竺士场 , 张苗 , 林成鲁 , 黄宜平 , 吴东平 and 李金华

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(9): 706-709
      竺士场, 张苗, 林成鲁, 黄宜平, 吴东平, 李金华. 一种新的SOI制备技术:H~+离子注入、键合和分离[J]. 半导体学报(英文版), 1997, 18(9): 706-709.
      Citation:
      竺士场, 张苗, 林成鲁, 黄宜平, 吴东平, 李金华. 一种新的SOI制备技术:H~+离子注入、键合和分离[J]. 半导体学报(英文版), 1997, 18(9): 706-709.
      shu

      • Received Date: 2015-08-19

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