J. Semicond. > 2008, Volume 29 > Issue 7 > 1373-1376
|

PAPERS

60GHz Wideband LNA MMIC with High Gain

Hou Yang, Zhang Jian, Li Lingyun and Sun Xiaowei

+ Author Affiliations

PDF

Abstract: A wideband low noise amplifier (LNA) MMIC was designed and fabricated with 0.15μm GaAs pHEMT process.It obtains high gain by means of adopting four stages topology.The chip size is 2mm×1mm.Covering 45~65GHz,it achieves a maximum 20.5dB gain and low VSWR.It has the advantages of higher gain,wider bandwidth and lower power consuming.This chip can be widely applied in 60GHz wideband wireless communication system.

Key words: pHEMT, MMIC, LNA, 60GHz

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3683 Times PDF downloads: 1677 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 18 February 2008 Online: Published: 01 July 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2008  >  29(7): 1373-1376
      Hou Yang, Zhang Jian, Li Lingyun, Sun Xiaowei. 60GHz Wideband LNA MMIC with High Gain[J]. Journal of Semiconductors, 2008, 29(7): 1373-1376. ****Hou Y, Zhang J, Li L Y, Sun X W. 60GHz Wideband LNA MMIC with High Gain[J]. J. Semicond., 2008, 29(7): 1373.
      Citation:
      Hou Yang, Zhang Jian, Li Lingyun, Sun Xiaowei. 60GHz Wideband LNA MMIC with High Gain[J]. Journal of Semiconductors, 2008, 29(7): 1373-1376. ****
      Hou Y, Zhang J, Li L Y, Sun X W. 60GHz Wideband LNA MMIC with High Gain[J]. J. Semicond., 2008, 29(7): 1373.
      shu

      60GHz Wideband LNA MMIC with High Gain

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-09
      • Revised Date: 2008-02-18
      • Published Date: 2008-08-01

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return