Chin. J. Semicond. > 2007, Volume 28 > Issue 1 > 78-83
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Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

Liu Shuhuan, Lin Dongsheng, Guo Xiaoqiang, Liu Hongbing, Jiang Xinbiao, Zhu Guangning, Li Da, Wang Zujun, Chen Wei, Zhang Wei, Zhou Hui, Shao Beibei and Li Junli

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Abstract: Changes in the typical electronic parameters of SiGe HBTs irradiated by pulse neutron and gamma rays from a reactor are measured.The DC common emitter static current gain of the SiGe HBTs only decreases by about 20% after being irradiated with 1e13cm-2 neutron fluence and 256.85Gy(Si) gamma total dose.The base current and the junction leakage current increase,while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.After irradiation,the cutoff frequency fT is nearly unchanged,but the maximum oscillation frequency fmax decreases a little.The mechanisms of the reactor pulse neutron and gamma rays irradiation damage for SiGe HBTs are preliminarily analyzed.

Key words: SiGe HBT, radiation effects, reactor

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    李肇基. 电子俘获对φb和热电子流的影响[J]. 半导体学报(英文版), 1985, 6(6): 648-654.
    shu

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    Received: 18 August 2015 Revised: 05 September 2006 Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(1): 78-83
      李肇基. 电子俘获对φb和热电子流的影响[J]. 半导体学报(英文版), 1985, 6(6): 648-654.
      Citation:
      Liu Shuhuan, Lin Dongsheng, Guo Xiaoqiang, Liu Hongbing, Jiang Xinbiao, Zhu Guangning, Li Da, Wang Zujun, Chen Wei, Zhang Wei, Zhou Hui, Shao Beibei, Li Junli. Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT[J]. Journal of Semiconductors, 2007, 28(1): 78-83. ****
      Liu S H, Lin D S, Guo X Q, Liu H B, Jiang X B, Zhu G N, Li D, Wang Z J, Chen W, Zhang W, Zhou H, Shao B B, Li J L. Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT[J]. Chin. J. Semicond., 2007, 28(1): 78.
      shu

      Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

      • Department of Engineering Physics,Tsinghua University,Beijing 100084,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • The 13 Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Northwest Institute of Nuclear Technology,Xi’an 710613,China

      • Department of Engineering Physics,Tsinghua University,Beijing 100084,China

      • Department of Engineering Physics,Tsinghua University,Beijing 100084,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-06-21
      • Revised Date: 2006-09-05
      • Published Date: 2006-12-26

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