Chin. J. Semicond. > 1994, Volume 15 > Issue 1 > 64-66
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两种注F能量的栅介质电离辐射响应特性

张国强，严荣良，余学锋，任边远，高文钰，赵元富，胡浴红，王英民

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(1): 64-66
      张国强，严荣良，余学锋，任边远，高文钰，赵元富，胡浴红，王英民. 两种注F能量的栅介质电离辐射响应特性[J]. 半导体学报(英文版), 1994, 15(1): 64-66.
      Citation:
      张国强，严荣良，余学锋，任边远，高文钰，赵元富，胡浴红，王英民. 两种注F能量的栅介质电离辐射响应特性[J]. 半导体学报(英文版), 1994, 15(1): 64-66.
      shu

      • Received Date: 2015-08-18

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