Chin. J. Semicond. > 1989, Volume 10 > Issue 11 > 859-864
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等离子增强化学汽相淀积a-SiC:H簿膜的AES研究

刘德中 , 罗兴华 , 张伟 and 王季陶

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    刘德中, 罗兴华, 张伟, 王季陶. 等离子增强化学汽相淀积a-SiC:H簿膜的AES研究[J]. 半导体学报(英文版), 1989, 10(11): 859-864.
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    Received: 19 August 2015 Revised: Online: Published: 01 November 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(11): 859-864
      刘德中, 罗兴华, 张伟, 王季陶. 等离子增强化学汽相淀积a-SiC:H簿膜的AES研究[J]. 半导体学报(英文版), 1989, 10(11): 859-864.
      Citation:
      刘德中, 罗兴华, 张伟, 王季陶. 等离子增强化学汽相淀积a-SiC:H簿膜的AES研究[J]. 半导体学报(英文版), 1989, 10(11): 859-864.
      shu

      • Received Date: 2015-08-19

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