Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 347-351
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具有动态控制阳极短路结构的高速IGBT(英文)

杨洪强 and 陈星弼

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Key words: 动态控制阳极短路, 关断时间, 导通压降

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 347-351
      杨洪强, 陈星弼. 具有动态控制阳极短路结构的高速IGBT(英文)[J]. 半导体学报(英文版), 2002, 23(4): 347-351.
      Citation:
      杨洪强, 陈星弼. 具有动态控制阳极短路结构的高速IGBT(英文)[J]. 半导体学报(英文版), 2002, 23(4): 347-351.
      shu

      • Received Date: 2015-08-19

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