Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 255-259
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硅基底电子束蒸发铝膜阳极氧化特性

邹建平 , 吴俊辉 , 朱青 , 濮林 , 朱健民 and 鲍希茂

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Key words: 多孔氧化铝, 阳极氧化, 电子束蒸发

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 255-259
      邹建平, 吴俊辉, 朱青, 濮林, 朱健民, 鲍希茂. 硅基底电子束蒸发铝膜阳极氧化特性[J]. 半导体学报(英文版), 2000, 21(3): 255-259.
      Citation:
      邹建平, 吴俊辉, 朱青, 濮林, 朱健民, 鲍希茂. 硅基底电子束蒸发铝膜阳极氧化特性[J]. 半导体学报(英文版), 2000, 21(3): 255-259.
      shu

      • Received Date: 2015-08-20

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