Chin. J. Semicond. > 1999, Volume 20 > Issue 8 > 633-638

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氮化镓缓冲层的物理性质

刘祥林 , 汪连山 , 陆大成 , 王晓晖 , 汪度 and 林兰英

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(8): 633-638
      刘祥林, 汪连山, 陆大成, 王晓晖, 汪度, 林兰英. 氮化镓缓冲层的物理性质[J]. 半导体学报(英文版), 1999, 20(8): 633-638.
      Citation:
      刘祥林, 汪连山, 陆大成, 王晓晖, 汪度, 林兰英. 氮化镓缓冲层的物理性质[J]. 半导体学报(英文版), 1999, 20(8): 633-638.
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      • Received Date: 2015-08-20

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