Chin. J. Semicond. > 1982, Volume 3 > Issue 1 > 62-67
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背散射和核反应技术用于氮化硅薄膜分析

承焕生 , 徐志伟 , 赵国庆 , 周筑颖 , 任月华 and 王季陶

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(1): 62-67
      承焕生, 徐志伟, 赵国庆, 周筑颖, 任月华, 王季陶. 背散射和核反应技术用于氮化硅薄膜分析[J]. 半导体学报(英文版), 1982, 3(1): 62-67.
      Citation:
      承焕生, 徐志伟, 赵国庆, 周筑颖, 任月华, 王季陶. 背散射和核反应技术用于氮化硅薄膜分析[J]. 半导体学报(英文版), 1982, 3(1): 62-67.
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      • Received Date: 2015-08-20

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